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Part Number Overview
Manufacturer Part Number
SQP100P06-9M3L_GE3
Description
MOSFET P-CH 60V 100A TO220AB
Detailed Description
P-Channel 60 V 100A (Tc) 187W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SQP100P06-9M3L_GE3 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12010 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SQP100
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SQP100P06-9M3L_GE3CT-ND
SQP100P06-9M3L_GE3CT
SQP100P06-9M3L_GE3DKR-ND
SQP100P06-9M3L_GE3TR
SQP100P06-9M3L_GE3DKR
SQP100P06-9M3L_GE3TR-ND
SQP100P06-9M3L_GE3TRINACTIVE
SQP100P06-9M3L_GE3DKRINACTIVE
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQP100P06-9M3L_GE3
Documents & Media
Datasheets
1(SQP100P06-9M3L)
PCN Obsolescence/ EOL
1(Mult Dev EOL 12/Nov/2021)
HTML Datasheet
1(SQP100P06-9M3L)
EDA Models
1(SQP100P06-9M3L_GE3 Models)
Quantity Price
-
Substitutes
-