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Part Number Overview
Manufacturer Part Number
PSMN6R0-25YLD115
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 25 V 61A (Ta) 43W (Ta) Surface Mount LFPAK56, Power-SO8
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,429
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
61A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 12 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
43W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PSMN6R0-25YLD115
NEXNXPPSMN6R0-25YLD115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN6R0-25YLD115
Documents & Media
Datasheets
1(PSMN6R0-25YLD)
HTML Datasheet
1(PSMN6R0-25YLD)
Quantity Price
-
Substitutes
-