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Part Number Overview
Manufacturer Part Number
IRF6798MTRPBF
Description
MOSFET N-CH 25V 37A DIRECTFET
Detailed Description
N-Channel 25 V 37A (Ta), 197A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
4,800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6560 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.8W (Ta), 78W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6798MTRPBF
Documents & Media
Datasheets
1(IRF6798M(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6798M(TR)PbF)
Quantity Price
-
Substitutes
-