China
Spain
Rusia
Italy
GermanyBC857CQA147
Part Number Overview
Manufacturer Part Number
BC857CQA147
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW Surface Mount DFN1010D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
9,947
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
280 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Base Product Number
BC857
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPBC857CQA147
2156-BC857CQA147
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC857CQA147
Documents & Media
Datasheets
1(BC857xQA)
HTML Datasheet
1(BC857xQA)
Quantity Price
-
Substitutes
-