China
Spain
Rusia
Italy
GermanyPUMH10/ZL115
Part Number Overview
Manufacturer Part Number
PUMH10/ZL115
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
8,876
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA
Frequency - Transition
230MHz
Power - Max
300mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
6-TSSOP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
NEXNXPPUMH10/ZL115
2156-PUMH10/ZL115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PUMH10/ZL115
Documents & Media
Datasheets
1(PEMH10, PUMH10)
HTML Datasheet
1(PEMH10, PUMH10)
Quantity Price
-
Substitutes
-