China
Spain
Rusia
Italy
Germany2SB647DTZ
Part Number Overview
Manufacturer Part Number
2SB647DTZ
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed Description
Bipolar (BJT) Transistor PNP 80 V 1 A 140MHz 800 mW Through Hole TO-92MOD
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
478
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 150mA, 5V
Power - Max
800 mW
Frequency - Transition
140MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RENRNS2SB647DTZ
2156-2SB647DTZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB647DTZ
Documents & Media
Datasheets
1(2SB647DTZ Datasheet)
Quantity Price
Quantity: 478
Unit Price: $0.63
Packaging: Bulk
MinMultiplier: 478
Packaging: Bulk
MinMultiplier: 478
Substitutes
-