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IRLR110ATM
Part Number Overview
Manufacturer Part Number
IRLR110ATM
Description
MOSFET N-CH 100V 4.7A DPAK
Detailed Description
N-Channel 100 V 4.7A (Tc) 2.5W (Ta), 22W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
IRLR110ATM Models
Standard Package
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Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
440mOhm @ 2.35A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 22W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IRLR11
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi IRLR110ATM
Documents & Media
Datasheets
1(IRLR/U110A)
Environmental Information
()
HTML Datasheet
1(IRLR/U110A)
EDA Models
1(IRLR110ATM Models)
Quantity Price
-
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