China
Spain
Rusia
Italy
GermanyMJE521G
Part Number Overview
Manufacturer Part Number
MJE521G
Description
TRANS NPN 40V 4A TO126
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 4 A 40 W Through Hole TO-126
Manufacturer
onsemi
Standard LeadTime
Edacad Model
MJE521G Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
MJE521
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-MJE521G-ON
MJE521GOS
ONSONSMJE521G
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJE521G
Documents & Media
Datasheets
1(MJE521)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Apr/2010)
HTML Datasheet
1(MJE521)
EDA Models
1(MJE521G Models)
Quantity Price
-
Substitutes
Part No. : 2N5190G
Manufacturer. : onsemi
Quantity Available. : 1,168
Unit Price. : $0.86000
Substitute Type. : Similar
Quantity Available. : 1,168
Unit Price. : $0.86000
Substitute Type. : Similar