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Part Number Overview
Manufacturer Part Number
2SA673C-E
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed Description
Bipolar (BJT) Transistor PNP 35 V 500 mA 400 mW Through Hole TO-92
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
706
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
35 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 3V
Power - Max
400 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-2SA673C-E
RENRNS2SA673C-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SA673C-E
Documents & Media
Datasheets
1(2SA673B-E Datasheet)
Quantity Price
Quantity: 706
Unit Price: $0.43
Packaging: Bulk
MinMultiplier: 706
Packaging: Bulk
MinMultiplier: 706
Substitutes
-