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Part Number Overview
Manufacturer Part Number
HN1C01F-GR(TE85L,F
Description
TRANS 2NPN 50V 0.15A SM6
Detailed Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
HN1C01F-GR(TE85L,F Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Cut Tape (CT)
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
800MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN1C01
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
HN1C01F-GR(TE85LF)CT-ND
HN1C01FGR(TE85LFTR
HN1C01F-GR(TE85LF)DKR
HN1C01F-GR(TE85L,F)
HN1C01F-GR(TE85LF)DKR-ND
HN1C01F-GR(TE85LFTR
HN1C01F-GR(TE85LF)CT
HN1C01FGR(TE85LFTR-ND
HN1C01F-GRTE85LF
HN1C01F-GR(TE85LF)TR
HN1C01F-GR(TE85LF)TR-ND
HN1C01F-GR(TE85LFCT
HN1C01F-GR(TE85LFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN1C01F-GR(TE85L,F
Documents & Media
Datasheets
1(HN1C01F)
EDA Models
1(HN1C01F-GR(TE85L,F Models)
Quantity Price
-
Substitutes
-