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Part Number Overview
Manufacturer Part Number
MMIX1F160N30T
Description
MOSFET N-CH 300V 102A 24SMPD
Detailed Description
N-Channel 300 V 102A (Tc) 570W (Tc) Surface Mount 24-SMPD
Manufacturer
IXYS
Standard LeadTime
45 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
GigaMOS™, HiPerFET™, TrenchT2™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
335 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
570W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
24-SMPD
Package / Case
24-PowerSMD, 21 Leads
Base Product Number
MMIX1F160
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS MMIX1F160N30T
Documents & Media
Datasheets
1(MMIX1F160N30T)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(MMIX1F160N30T)
Quantity Price
Quantity: 300
Unit Price: $35.58817
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
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