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Part Number Overview
Manufacturer Part Number
IRLI610ATU
Description
MOSFET N-CH 200V 3.3A I2PAK
Detailed Description
N-Channel 200 V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,902
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCIRLI610ATU
2156-IRLI610ATU-FS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRLI610ATU
Documents & Media
Datasheets
1(IRLI610ATU)
Quantity Price
Quantity: 1902
Unit Price: $0.16
Packaging: Tube
MinMultiplier: 1902
Packaging: Tube
MinMultiplier: 1902
Substitutes
-