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FA4F4M-T1B-A
Part Number Overview
Manufacturer Part Number
FA4F4M-T1B-A
Description
TRANS PREBIAS NPN 50V 0.1A
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
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Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Box
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µ, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
200 mW
Base Product Number
FA4F4M
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation FA4F4M-T1B-A
Documents & Media
Datasheets
1(FA4xzx)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
HTML Datasheet
1(FA4xzx)
Quantity Price
-
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