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Part Number Overview
Manufacturer Part Number
FDS6692A
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Detailed Description
N-Channel 30 V 9A (Ta) 1.47W (Ta) Surface Mount 8-SOIC
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
582
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1610 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.47W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDS6692A
FAIFSCFDS6692A
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDS6692A
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 582
Unit Price: $0.52
Packaging: Bulk
MinMultiplier: 582
Packaging: Bulk
MinMultiplier: 582
Substitutes
-