China
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Italy
GermanyFQA10N60C
Part Number Overview
Manufacturer Part Number
FQA10N60C
Description
MOSFET N-CH 600V 10A TO3P
Detailed Description
N-Channel 600 V 10A (Tc) 192W (Tc) Through Hole TO-3P
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
141
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQA10N60C
2156-FQA10N60C-FS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA10N60C
Documents & Media
Datasheets
1(FQA10N60C)
Quantity Price
Quantity: 141
Unit Price: $2.13
Packaging: Tube
MinMultiplier: 141
Packaging: Tube
MinMultiplier: 141
Substitutes
-