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FQI15P12TU
Part Number Overview
Manufacturer Part Number
FQI15P12TU
Description
MOSFET P-CH 120V 15A I2PAK
Detailed Description
P-Channel 120 V 15A (Tc) 3.75W (Ta), 100W (Tc) Through Hole I2PAK (TO-262)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
452
Supplier Stocks
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Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI1
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQI15P12TU
FAIFSCFQI15P12TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI15P12TU
Documents & Media
-
Quantity Price
Quantity: 452
Unit Price: $0.66
Packaging: Bulk
MinMultiplier: 452
Substitutes
-
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