China
Spain
Rusia
Italy
GermanyIRFI4510GPBF
Part Number Overview
Manufacturer Part Number
IRFI4510GPBF
Description
MOSFET N CH 100V 35A TO220
Detailed Description
N-Channel 100 V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2998 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFI4510GPBF
SP001566752
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFI4510GPBF
Documents & Media
Datasheets
1(IRFI4510GPBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFI4510GPBF)
Simulation Models
1(IRFI4510G Spice Model)
Quantity Price
-
Substitutes
-