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Part Number Overview
Manufacturer Part Number
SIRA90ADP-T1-GE3
Description
MOSFET N-CH 30V 71A/334A PPAK
Detailed Description
N-Channel 30 V 71A (Ta), 334A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Cut Tape (CT)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
71A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs
0.78mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9120 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6.3W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRA90
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIRA90ADP-T1-GE3TR
742-SIRA90ADP-T1-GE3DKR
742-SIRA90ADP-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIRA90ADP-T1-GE3
Documents & Media
Datasheets
1(SiRA90ADP)
HTML Datasheet
1(SiRA90ADP)
Quantity Price
-
Substitutes
-