Last updates
20260416
Language
English
China
Spain
Rusia
Italy
Germany
Electronic News
Stock Inquiry Online
PBSS4130PANP,115
Part Number Overview
Manufacturer Part Number
PBSS4130PANP,115
Description
NOW NEXPERIA PBSS4130PANP - SMAL
Detailed Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,018
Supplier Stocks
>>>Click to Check<<<
Want to know more about PBSS4130PANP,115 ?
Innovo Technology will serve you professionally
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
100mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 500mA, 2V
Power - Max
510mW
Frequency - Transition
165MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PBSS4130
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-PBSS4130PANP,115
NEXNXPPBSS4130PANP,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4130PANP,115
Documents & Media
Datasheets
1(PBSS4130PANP,115 Datasheet)
Quantity Price
Quantity: 2018
Unit Price: $0.15
Packaging: Bulk
MinMultiplier: 2018
Substitutes
-
Similar Products
NV25040DTHFT3G
102394-7
AHA50AFB-6R49
RN73H1ETTP2801C50
ATSAMD20E16B-AU