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Part Number Overview
Manufacturer Part Number
SSM3K303T(TE85L,F)
Description
MOSFET N-CH 30V 2.9A TSM
Detailed Description
N-Channel 30 V 2.9A (Ta) 700mW (Ta) Surface Mount TSM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
83mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SSM3K303
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
SSM3K303T(TE85LF)DKR
SSM3K303T(TE85LF)CT
SSM3K303T(TE85LF)TR
SSM3K303TTE85LF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage SSM3K303T(TE85L,F)
Documents & Media
Datasheets
()
HTML Datasheet
1(Mosfets Prod Guide)
Product Drawings
()
Quantity Price
-
Substitutes
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