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Part Number Overview
Manufacturer Part Number
FDB6670AS
Description
MOSFET N-CH 30V 62A TO263AB
Detailed Description
N-Channel 30 V 62A (Ta) 62.5W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
157
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
62A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFDB6670AS
2156-FDB6670AS-FSTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB6670AS
Documents & Media
Datasheets
1(FDB6670AS)
Quantity Price
Quantity: 157
Unit Price: $1.91
Packaging: Bulk
MinMultiplier: 157
Packaging: Bulk
MinMultiplier: 157
Substitutes
-