China
Spain
Rusia
Italy
GermanyUNR421K00A
Part Number Overview
Manufacturer Part Number
UNR421K00A
Description
TRANS PREBIAS NPN 50V NS-B1
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
Manufacturer
Panasonic Electronic Components
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Panasonic Electronic Components
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
150 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
UNR421
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
UNR421K00ATB
UNR421K00ACT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Panasonic Electronic Components UNR421K00A
Documents & Media
Datasheets
1(UNR421x Series)
Featured Product
1(Wearables Technology Components)
HTML Datasheet
1(UNR421x Series)
Product Drawings
()
Quantity Price
-
Substitutes
-