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Part Number Overview
Manufacturer Part Number
BC637G
Description
TRANS NPN 60V 1A TO92
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
BC637G Models
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
625 mW
Frequency - Transition
200MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92 (TO-226)
Base Product Number
BC637
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
ONSONSBC637G
BC637G-ND
2156-BC637G-ON
BC637GOS
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BC637G
Documents & Media
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(BC637, 39, 39-16)
EDA Models
1(BC637G Models)
Quantity Price
-
Substitutes
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Quantity Available. : 0
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