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Part Number Overview
Manufacturer Part Number
PDTD123YT/APGR
Description
TRANS PREBIAS NPN 50V 500MA
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount SOT23-3 (TO-236)
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
8,876
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
PDTD123Y
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT23-3 (TO-236)
Environmental & Export Classifications
HTSUS
0000.00.0000
Other Names
NEXNEXPDTD123YT/APGR
2156-PDTD123YT/APGR-NEX
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Nexperia USA Inc. PDTD123YT/APGR
Documents & Media
Datasheets
1(PDTD123YT/APGR Datasheet)
Quantity Price
Quantity: 8876
Unit Price: $0.03
Packaging: Bulk
MinMultiplier: 8876
Packaging: Bulk
MinMultiplier: 8876
Substitutes
-