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Part Number Overview
Manufacturer Part Number
SI4833BDY-T1-GE3
Description
MOSFET P-CHANNEL 30V 4.6A 8SOIC
Detailed Description
P-Channel 30 V 4.6A (Tc) 2.75W (Tc) Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
68mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2.75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4833
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4833BDY-T1-GE3-ND
SI4833BDY-T1-GE3TR
SI4833BDY-T1-GE3DKR
SI4833BDY-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4833BDY-T1-GE3
Documents & Media
Datasheets
1(SI4833BDY)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI4833BDY)
Quantity Price
-
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