China
Spain
Rusia
Italy
GermanyCY14B104N-BA20XI
Part Number Overview
Manufacturer Part Number
CY14B104N-BA20XI
Description
IC NVSRAM 4MBIT PARALLEL 48FBGA
Detailed Description
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 20 ns 48-FBGA (6x10)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
299
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
NVSRAM
Technology
NVSRAM (Non-Volatile SRAM)
Memory Size
4Mbit
Memory Organization
256K x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
20ns
Access Time
20 ns
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Supplier Device Package
48-FBGA (6x10)
Base Product Number
CY14B104
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Other Names
CYPCYPCY14B104N-BA20XI
2156-CY14B104N-BA20XI-CY
Category
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY14B104N-BA20XI
Documents & Media
Datasheets
1(CY14B104L/N)
Product Training Modules
1(NVRAM (Nonvolatile RAM) Overview)
Featured Product
1(Cypress Memory Products)
PCN Packaging
()
HTML Datasheet
1(CY14B104L/N)
Quantity Price
-
Substitutes
-