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Part Number Overview
Manufacturer Part Number
DMG4N60SJ3
Description
MOSFET N-CH 600V 3A TO251
Detailed Description
N-Channel 600 V 3A (Tc) 41W (Tc) Through Hole TO-251
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
532 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
DMG4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMG4N60SJ3
Documents & Media
Datasheets
1(DMG4N60SJ3)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Devices EOL 05/Feb/2019)
HTML Datasheet
1(DMG4N60SJ3)
Quantity Price
-
Substitutes
-