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TP90H050WS
Part Number Overview
Manufacturer Part Number
TP90H050WS
Description
GANFET N-CH 900V 34A TO247-3
Detailed Description
N-Channel 900 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Manufacturer
Transphorm
Standard LeadTime
16 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
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Technical specifications
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
63mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP90H050
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP90H050WS
Documents & Media
Datasheets
1(TP90H050WS)
Featured Product
1(TP90H050WS 900 V 50 mΩ GaN FET in TO-247)
HTML Datasheet
1(TP90H050WS)
Quantity Price
Quantity: 510
Unit Price: $11.93567
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $13.17042
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $13.99367
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $17.29
Packaging: Tube
MinMultiplier: 1
Substitutes
-
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