China
Spain
Rusia
Italy
GermanyFQP13N06L
Part Number Overview
Manufacturer Part Number
FQP13N06L
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 60 V 13.6A (Tc) 45W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
649
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
110mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQP13N06L
2156-FQP13N06L
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP13N06L
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 649
Unit Price: $0.46
Packaging: Bulk
MinMultiplier: 649
Packaging: Bulk
MinMultiplier: 649
Substitutes
-