China
Spain
Rusia
Italy
Germany2N6213
Part Number Overview
Manufacturer Part Number
2N6213
Description
PNP POWER TRANSISTOR SILICON AMP
Detailed Description
Bipolar (BJT) Transistor PNP 350 V 2 A 3 W Through Hole TO-66 (TO-213AA)
Manufacturer
Microchip Technology
Standard LeadTime
35 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
2V @ 125mA, 1A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1A, 5V
Power - Max
3 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 200°C
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66 (TO-213AA)
Base Product Number
2N6213
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology 2N6213
Documents & Media
Datasheets
1(2N6211 - 2N6213)
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
HTML Datasheet
1(2N6211 - 2N6213)
Quantity Price
Quantity: 100
Unit Price: $101.0804
Packaging: Bulk
MinMultiplier: 100
Packaging: Bulk
MinMultiplier: 100
Substitutes
-