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Part Number Overview
Manufacturer Part Number
2SC3672-O(T2ASH,FM
Description
TRANS NPN 300V 0.1A MSTM
Detailed Description
Bipolar (BJT) Transistor NPN 300 V 100 mA 80MHz 1 W Through Hole MSTM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 10V
Power - Max
1 W
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SC3672
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2SC3672-O(T2ASHFM
2SC3672OT2ASHFM
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC3672-O(T2ASH,FM
Documents & Media
Datasheets
1(2SC3672)
HTML Datasheet
1(2SC3672)
Quantity Price
-
Substitutes
-