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Part Number Overview
Manufacturer Part Number
SUP70060E-GE3
Description
MOSFET N-CH 100V 131A TO220AB
Detailed Description
N-Channel 100 V 131A (Tc) 200W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
62 Weeks
Edacad Model
SUP70060E-GE3 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
ThunderFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3330 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP70060
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP70060E-GE3
Documents & Media
Datasheets
1(SUP70060E)
Featured Product
1(Medium Voltage TrenchFET® Power MOSFETs with Dual-Sided Cooling)
HTML Datasheet
1(SUP70060E)
EDA Models
1(SUP70060E-GE3 Models)
Quantity Price
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Unit Price: $0.83875
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Unit Price: $1.3215
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MinMultiplier: 1
Substitutes
Part No. : CSD19531KCS
Manufacturer. : Texas Instruments
Quantity Available. : 185
Unit Price. : $2.13000
Substitute Type. : Similar
Quantity Available. : 185
Unit Price. : $2.13000
Substitute Type. : Similar