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Part Number Overview
Manufacturer Part Number
IRFW710BTM
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 400 V 2A (Tc) 3.13W (Ta), 36W (Tc) Surface Mount D2PAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,600
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFW710BTM
FAIFSCIRFW710BTM
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFW710BTM
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1600
Unit Price: $0.19
Packaging: Bulk
MinMultiplier: 1600
Packaging: Bulk
MinMultiplier: 1600
Substitutes
-