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Part Number Overview
Manufacturer Part Number
APTGT75A1202G
Description
IGBT MODULE 1200V 110A 357W SP2
Detailed Description
IGBT Module Trench Field Stop Half Bridge 1200 V 110 A 357 W Chassis Mount SP2
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
Trench Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
110 A
Power - Max
357 W
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector Cutoff (Max)
50 µA
Input Capacitance (Cies) @ Vce
5.34 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP2
Supplier Device Package
SP2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APTGT75A1202G-ND
150-APTGT75A1202G
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Microsemi Corporation APTGT75A1202G
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Nov/2017)
Quantity Price
-
Substitutes
-