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Part Number Overview
Manufacturer Part Number
HAT2165N-EL-E
Description
MOSFET N-CH 30V 55A 8LFPAK
Detailed Description
N-Channel 30 V 55A (Ta) 30W (Tc) Surface Mount 8-LFPAK-iV
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
145
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
55A (Ta)
Rds On (Max) @ Id, Vgs
3.6mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-LFPAK-iV
Package / Case
8-PowerSOIC (0.154", 3.90mm Width)
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HAT2165N-EL-E
2156-HAT2165N-EL-E-RETR-ND
RENRNSHAT2165N-EL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2165N-EL-E
Documents & Media
Datasheets
1(HAT2165N-EL-E)
Quantity Price
Quantity: 145
Unit Price: $2.07
Packaging: Bulk
MinMultiplier: 145
Packaging: Bulk
MinMultiplier: 145
Substitutes
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