China
Spain
Rusia
Italy
GermanyAUIRL7766M2TR
Part Number Overview
Manufacturer Part Number
AUIRL7766M2TR
Description
MOSFET N-CH 100V 10A DIRECTFET
Detailed Description
N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4
Manufacturer
International Rectifier
Standard LeadTime
Edacad Model
Standard Package
156
Supplier Stocks
Technical specifications
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5305 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric M4
Package / Case
DirectFET™ Isometric M4
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-AUIRL7766M2TR
INFIRFAUIRL7766M2TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier AUIRL7766M2TR
Documents & Media
Datasheets
1(AUIRL7766M2TR Datasheet)
Quantity Price
Quantity: 156
Unit Price: $1.92
Packaging: Bulk
MinMultiplier: 156
Packaging: Bulk
MinMultiplier: 156
Substitutes
-