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Part Number Overview
Manufacturer Part Number
2SB562CTZ-E
Description
SMALL SIGNAL BIPOLAR TRANS PNP
Detailed Description
Bipolar (BJT) Transistor PNP 20 V 1 A 350MHz 900 mW Through Hole TO-92MOD
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
1,475
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
20 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 80mA, 800mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
900 mW
Frequency - Transition
350MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SB562CTZ-E
RENRNS2SB562CTZ-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB562CTZ-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1475
Unit Price: $0.2
Packaging: Bulk
MinMultiplier: 1475
Packaging: Bulk
MinMultiplier: 1475
Substitutes
-