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Part Number Overview
Manufacturer Part Number
STI6N80K5
Description
MOSFET N-CH 800V 4.5A I2PAK
Detailed Description
N-Channel 800 V 4.5A (Tc) 85W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STI6N80K5 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
SuperMESH5™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
255 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI6
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-15017-5
-497-15017-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI6N80K5
Documents & Media
Datasheets
1(ST(B,D,I,P)6N80K5)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
PCN Assembly/Origin
1(IPD/15/9124 20/Mar/2015)
HTML Datasheet
1(ST(B,D,I,P)6N80K5)
EDA Models
1(STI6N80K5 Models)
Quantity Price
-
Substitutes
-