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Part Number Overview
Manufacturer Part Number
UPA1476H-AZ
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 115V 2A 3.5W Through Hole 10-SIP
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
130
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
115V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V
Power - Max
3.5W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
10-SIP
Supplier Device Package
10-SIP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNSUPA1476H-AZ
2156-UPA1476H-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Renesas Electronics Corporation UPA1476H-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 130
Unit Price: $2.31
Packaging: Bulk
MinMultiplier: 130
Packaging: Bulk
MinMultiplier: 130
Substitutes
-