China
Spain
Rusia
Italy
GermanyIXFT58N20
Part Number Overview
Manufacturer Part Number
IXFT58N20
Description
MOSFET N-CH 200V 58A TO268
Detailed Description
N-Channel 200 V 58A (Tc) 300W (Tc) Surface Mount TO-268AA
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
IXFT58
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT58N20
Documents & Media
Datasheets
1(IXF(H,M,T)(42,50,58)N20)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXF(H,M,T)(42,50,58)N20)
Quantity Price
-
Substitutes
-