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Part Number Overview
Manufacturer Part Number
FQU9N25TU
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description
N-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
538
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQU9N25TU
FAIFSCFQU9N25TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU9N25TU
Documents & Media
Datasheets
1(FQU9N25TU Datasheet)
Quantity Price
Quantity: 538
Unit Price: $0.56
Packaging: Bulk
MinMultiplier: 538
Packaging: Bulk
MinMultiplier: 538
Substitutes
-