China
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Rusia
Italy
Germany2N5210RLRA
Part Number Overview
Manufacturer Part Number
2N5210RLRA
Description
SMALL SIGNAL BIPOLAR TRANSTR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 100 mA 30MHz 625 mW Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
6,662
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
30MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-2N5210RLRA
ONSONS2N5210RLRA
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2N5210RLRA
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 6662
Unit Price: $0.05
Packaging: Bulk
MinMultiplier: 6662
Packaging: Bulk
MinMultiplier: 6662
Substitutes
-