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Part Number Overview
Manufacturer Part Number
FF200R12KS4PHOSA1
Description
IGBT MOD 1200V 275A 1400W
Detailed Description
IGBT Module Half Bridge 1200 V 275 A 1400 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
8
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
275 A
Power - Max
1400 W
Vce(on) (Max) @ Vge, Ic
3.7V @ 15V, 200A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
13 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF200R12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FF200R12KS4P
SP001403816
2156-FF200R12KS4PHOSA1-448
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF200R12KS4PHOSA1
Documents & Media
Datasheets
1(FF200R12KS4P)
Environmental Information
1(RoHS Certificate)
Quantity Price
Quantity: 32
Unit Price: $144.48344
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Quantity: 16
Unit Price: $150.1275
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Quantity: 1
Unit Price: $160.29
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Substitutes
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