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Part Number Overview
Manufacturer Part Number
R6008FNX
Description
MOSFET N-CH 600V 8A TO-220FM
Detailed Description
N-Channel 600 V 8A (Tc) 50W (Tc) Through Hole TO-220FM
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
R6008FNX Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6008
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6008FNX
Documents & Media
Datasheets
1(R6008FNX)
Other Related Documents
()
Environmental Information
()
EDA Models
1(R6008FNX Models)
Simulation Models
1(R6008FNX Spice Model)
Reliability Documents
1(TO220FM MOS Reliability Test)
Quantity Price
-
Substitutes
-