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2SC4134S-E
Part Number Overview
Manufacturer Part Number
2SC4134S-E
Description
TRANS NPN 100V 1A TP
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 800 mW Through Hole TP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
2SC4134S-E Models
Standard Package
500
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Power - Max
800 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
TP
Base Product Number
2SC4134
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SC4134S-E-ON
ONSONS2SC4134S-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC4134S-E
Documents & Media
Datasheets
1(2SC4134)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 31/Jan/2019)
HTML Datasheet
1(2SC4134)
EDA Models
1(2SC4134S-E Models)
Quantity Price
-
Substitutes
Part No. : TTC004B,Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $0.52000
Substitute Type. : Similar
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