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Part Number Overview
Manufacturer Part Number
2SD1153-AE
Description
NPN DARLINGTON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 50 V 1.5 A 120MHz 900 mW Through Hole 3-MP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
833
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
4000 @ 500mA, 2V
Power - Max
900 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
ONSONS2SD1153-AE
2156-2SD1153-AE
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1153-AE
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 833
Unit Price: $0.36
Packaging: Bulk
MinMultiplier: 833
Packaging: Bulk
MinMultiplier: 833
Substitutes
-