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FQB19N10LTM
Part Number Overview
Manufacturer Part Number
FQB19N10LTM
Description
MOSFET N-CH 100V 19A D2PAK
Detailed Description
N-Channel 100 V 19A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
503
Supplier Stocks
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Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQB19N10LTM
FAIFSCFQB19N10LTM
2156-FQB19N10LTM-FSTR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB19N10LTM
Documents & Media
Datasheets
1(FQB19N10LTM)
Quantity Price
Quantity: 503
Unit Price: $0.6
Packaging: Bulk
MinMultiplier: 503
Substitutes
-
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