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Part Number Overview
Manufacturer Part Number
2SB827R
Description
PNP SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 7 A 10MHz 60 W Through Hole TO-3PB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
272
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 400mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
60 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONS2SB827R
2156-2SB827R
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB827R
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 273
Unit Price: $1.1
Packaging: Bulk
MinMultiplier: 273
Packaging: Bulk
MinMultiplier: 273
Substitutes
-