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Part Number Overview
Manufacturer Part Number
BCR555E6327HTSA1
Description
TRANS PREBIAS PNP 50V SOT23
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Last Time Buy
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
150 MHz
Power - Max
330 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
Base Product Number
BCR555
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
BCR555E6327XT
IFEINFBCR555E6327HTSA1
BCR 555 E6327
BCR 555 E6327CT-ND
BCR 555 E6327DKR
BCR555E6327BTSA1
BCR555E6327HTSA1CT
BCR 555 E6327-ND
BCR 555 E6327DKR-ND
BCR555E6327HTSA1DKR
BCR 555 E6327TR-ND
BCR555E6327
BCR555E6327HTSA1TR
2156-BCR555E6327HTSA1
SP000010855
BCR 555 E6327CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Infineon Technologies BCR555E6327HTSA1
Documents & Media
Datasheets
1(BCR555)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(BCR555)
Quantity Price
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