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PBSS4160QA147
Part Number Overview
Manufacturer Part Number
PBSS4160QA147
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 180MHz 1 W Surface Mount DFN1010D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
4,163
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Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
245mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
230 @ 100mA, 2V
Power - Max
1 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-PBSS4160QA147
NEXNXPPBSS4160QA147
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBSS4160QA147
Documents & Media
Datasheets
1(PBSS4160QA)
HTML Datasheet
1(PBSS4160QA)
Quantity Price
-
Substitutes
-
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